PM25RSK120Mitsubishi - IPM

PM25RSK120 Description

PM25RSK120 is a high power IGBT Insulated Gate Bipolar Transistor module produced by Mitsubishi Electric. It is designed for use in high voltage and high current applications such as motor drives, renewable energy systems, and industrial machinery. The PM25RSK120 module consists of two IGBTs and two diodes connected in a half-bridge configuration. It has a maximum current rating of 50A and a maximum voltage rating of 1200V. The module is equipped with built-in overcurrent and over-temperature protection features to ensure safe and reliable operation. The PM25RSK120 module has a low thermal resistance design, allowing for efficient heat dissipation and ensuring long-term stability and reliability. It is also compact and lightweight, making it ideal for applications where space is limited. The PM25RSK120 module is a reliable and high-performance solution for high power applications that require efficient power switching and precise control.

Target Applications

Mitsubishi PM25RSK120 is used for Inverters, DC motor controls, Switching power supplies and AC motor controls.

Key Specifications

Manufacturer	Mitsubishi Electric
Category	Power Transistor Modules
Rated voltage	1200 V
Rated current	125 A

PM25RSK120 Video

Download PM25RSK120 Datasheet

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