CM400DU-12NFHMitsubishi - IGBT Module

CM400DU-12NFH Description

CM400DU-12NFH is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Mitsubishi Electric. The IGBT is a type of power semiconductor device that combines the high-speed switching capability of a MOSFET with the high-voltage and high-current handling capabilities of a bipolar transistor. The CM400DU-12NFH IGBT module has the following specifications: Collector-Emitter Voltage (Vces): 1200V Collector Current (Ic): 400A Maximum Power Dissipation (Pd): 2200W Gate-Emitter Voltage (Vges): +/- 20V Operating Temperature: -40°C to +150°C This IGBT module is designed for use in high power applications, such as motor drives, power supplies, and renewable energy systems. It features low switching losses and high thermal performance, making it an efficient and reliable option for high power applications. The module also includes built-in protective features such as overcurrent and overvoltage protection, making it safer to use in high power applications.

Summary of Features

CM400DU-12NFH is a 600V 400A IGBT Module.

Target Applications

Mitsubishi CM400DU-12NFH is used for High frequency switching use (30kHz to 60kHz), Gradient amplifier, Induction heating and Power supply, etc.

Key Specifications

Manufacturer	Mitsubishi Electric
Configuration	Dual - two IGBTs in half-bridge configuration with free-wheel diodes
Series	NFH-Series (high-frequency)
VCES	600 V
IC	400 A
ICM (peak)	800 A
VCE(sat) typ.	2.0 V @ 400 A
Isolation voltage	2500 Vrms (AC, 1 min)
Terminal torque	M6: 3.5 - 4.5 N·m
Mounting torque	M6: 3.5 - 4.5 N·m
Weight	400 g
Junction temperature	-40 to +150 °C

CM400DU-12NFH Video

Download CM400DU-12NFH Datasheet

CM400DU-12NFH PDF Datasheet