CM400DU-12FMitsubishi - IGBT Power Transistor Module
CM400DU-12F Description
CM400DU-12F is a high-power insulated gate bipolar transistor (IGBT) module manufactured by Mitsubishi Electric. This module is designed for use in high-power applications such as motor drives, power supplies, and industrial equipment. Here are some key specifications for the CM400DU-12F: Maximum collector-emitter voltage (Vce): 1200 volts Maximum collector current (Ic): 400 amperes Maximum power dissipation (Pd): 2120 watts Gate-emitter voltage (Vge) range: +/- 20 volts Operating temperature range: -40 to 150 degrees Celsius The CM400DU-12F features a high switching frequency and low on-state voltage drop, making it ideal for high-power applications that require fast switching speeds and low power losses. It incorporates a high-speed IGBT module and a free-wheeling diode, which provides reliable and efficient power switching. This IGBT module is designed with a compact and robust package, which reduces the overall footprint and weight of the system. It also features a built-in overcurrent protection circuit and temperature sensor, ensuring safe and reliable operation. Overall, the CM400DU-12F is a high-performance IGBT module that is well-suited for use in a wide range of high-power applications. Its compact size, high efficiency, and robust design make it an ideal choice for use in modern power systems.Summary of Features
CM400DU-12F is a 600V 400A IGBT Power Transistor Module.
Target Applications
Mitsubishi CM400DU-12F is used for AC Motor Control, UPS, Battery Powered Supplies.
Key Specifications
| Manufacturer | Mitsubishi Electric |
| Configuration | Dual - two IGBTs in half-bridge configuration with free-wheel diodes |
| Series | F-Series |
| VCES | 600 V |
| IC | 400 A (TC = 25 °C) |
| ICM (peak) | 800 A |
| VCE(sat) typ. | 1.6 V @ 400 A |
| Isolation voltage | 2500 Vrms (AC, 1 min) |
| Terminal torque | M6: 3.5 - 4.5 N·m |
| Mounting torque | M6: 3.5 - 4.5 N·m |
| Weight | 400 g |
| Junction temperature | -40 to +150 °C |

