IXKN75N60CIXYS - Power MOSFET Module

IXKN75N60C Description

IXKN75N60C is a power field-effect transistor (FET) manufactured by IXYS Corporation, a leading supplier of power semiconductor devices. It is designed for use in high-power switching applications, such as motor control, power supplies, and lighting systems. This power FET has a maximum drain-source voltage rating of 600V and a maximum continuous drain current rating of 75 amps. It features a low on-state resistance, which helps to minimize power loss and improve efficiency in power conversion applications. The IXKN75N60C power FET also has a fast switching speed, which enables it to switch rapidly between on and off states, making it suitable for high-frequency switching applications. It also includes built-in protection features, such as over-current and over-temperature protection, to ensure safe and reliable operation. Overall, the IXKN75N60C power FET is a high-performance and reliable solution for high-power switching applications, providing excellent efficiency, fast switching speed, and built-in protection features to ensure safe and reliable operation.

Summary of Features

Target Applications

IXYS IXKN75N60C is used for high-frequency power switching in switch mode power supplies, DC-DC converters, battery-powered vehicles and equipment, welding machines and induction heating.

Key Specifications

IXKN75N60C is a 600 V, 75 A power MOSFET (CoolMOS). Source: manufacturer datasheet.

Parameter	Value
Product type	Power MOSFET (CoolMOS)
Drain-source voltage (VDSS)	600 V
Drain current (ID)	75 A
Datasheet	Available on this page (PDF)

Download IXKN75N60C Datasheet

IXKN75N60C PDF Datasheet