FZ600R12KE3

FZ600R12KE3 Description

is a high-power IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Technologies. This module is designed for use in high-voltage and high-current applications such as motor drives, wind turbines, and power supplies. Here are some key specifications for the FZ600R12KE3: Maximum collector-emitter voltage (Vce): 1200 volts Maximum collector current (Ic): 600 amperes Maximum power dissipation (Pd): 2400 watts Gate-emitter voltage (Vge) range: +/- 20 volts Operating temperature range: -40 to 150 degrees Celsius The FZ600R12KE3 features low on-state voltage drop, high current capability, and low switching loss, making it ideal for high power switching applications. It also incorporates a rugged and reliable design to ensure high performance and long-term reliability. This IGBT module is designed with a dual IGBT chip topology which helps to reduce the switching loss and improve the overall efficiency of the device. The FZ600R12KE3 module also features a built-in temperature sensor and short-circuit protection to ensure safe and reliable operation. Overall, the FZ600R12KE3 is a high-performance IGBT module that is well-suited for use in a wide range of high power applications.

Summary of Features

FZ600R12KE3 is a(n) 1200V, 600A IGBT Modules. Buy original FZ600R12KE3 1200V 600A IN STOCK Infineon - USComponent. FZ600R12KE3 worldwide delivery & tech support..

Target Applications

INFINEON FZ600R12KE3 finds applications in various industries and systems where high power switching is required.

Key Specifications

1200V, 600Afor Solar Inverter

Download FZ600R12KE3 Datasheet

FZ600R12KE3 PDF Datasheet