FZ1200R16KF4Infineon - IGBT Module

FZ1200R16KF4 Description

FZ1200R16KF4 is a power module designed for use in high-power switching applications. It is manufactured by Infineon Technologies and consists of two insulated-gate bipolar transistors (IGBTs) and two diodes in a single module. This power module has a maximum collector current of 1200A and a maximum collector-emitter voltage of 1600V. It also features low saturation voltage and high-speed switching performance, making it ideal for use in a variety of applications such as motor drives, inverters, and power supplies. The FZ1200R16KF4 power module is designed to offer high efficiency and reliability, even in demanding operating conditions. It features an optimized thermal design that ensures effective heat dissipation, as well as advanced protection features such as short-circuit protection and over-temperature protection. Overall, the FZ1200R16KF4 power module is a robust and efficient solution for high-power switching applications, offering a compact and easy-to-use package that simplifies circuit design and assembly.

Summary of Features

FZ1200R16KF4 is a 1600V 1200A IGBT Module.

Target Applications

Infineon FZ1200R16KF4 is used for Drives, Wind, Traction and CAV.

Key Specifications

Manufacturer	Infineon Technologies (eupec)
Configuration	Single switch - IGBT with free-wheeling diode
VCES	1600 V
IC	1200 A (DC)
ICRM	2400 A (tp = 1 ms)
VCE(sat) typ.	3.5 V @ 1200 A
Isolation test voltage	3.4 kV RMS, 50 Hz, 1 min
Internal insulation	Al2O3
Mounting torque	M6: 3 Nm (±10%)
Terminal torque	M4: 2 Nm
Weight	approx. 1500 g
Operating junction temperature	150 °C max.

FZ1200R16KF4 Video

Download FZ1200R16KF4 Datasheet

FZ1200R16KF4 PDF Datasheet