FS02MR12A8MA2B Infineon - SiC MOSFET Module

Category: MOSFET Modules

Specifications: 1200V, 390A

FS02MR12A8MA2B Infineon SiC MOSFET Module

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FS02MR12A8MA2B Description

FS02MR12A8MA2B is a 1200 V, 390 A Infineon HybridPACK Drive G2 SiC MOSFET module (six-pack), used for automotive applications, hybrid and electric vehicles, motor drives, commercial, construction and agricultural vehicles.

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Summary of Features

  • New semiconductor material - silicon carbide
  • Low RDS,on
  • Low switching losses
  • Low Qg and Crss
  • Low inductive design
  • Short-time extended operation temperature Tvj,op = 200 °C
  • 4.2 kV DC 1 second insulation
  • High creepage and clearance distances
  • Compact design
  • High power density

Target Applications

Infineon FS02MR12A8MA2B is used for Automotive applications, hybrid and electric vehicles, motor drives, commercial, construction and agricultural vehicles.

Key Specifications

FS02MR12A8MA2B is a 1,200 V, 390 A Infineon HybridPACK Drive G2 SiC MOSFET module. Source: manufacturer datasheet.

ParameterValue
Product typeSiC MOSFET module
ConfigurationSix-pack (3-phase inverter)
Drain-source voltage (VDSS)1,200 V
Drain current (IDN)390 A
TechnologyCoolSiC MOSFET
PackageHybridPACK Drive G2

Technical document (PDF)  |  Request a quote for FS02MR12A8MA2B (reply within 24 hours)

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