FF3MR20W3M1H_H11 Infineon - SiC MOSFET Module

Also written as: FF3MR20W3M1H-H11

Category: MOSFET Modules

Specifications: 2000V, 400A

FF3MR20W3M1H_H11 Infineon SiC MOSFET Module

Representative image – actual product may differ

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FF3MR20W3M1H_H11 Description

FF3MR20W3M1H_H11 is a 2000 V / 400 A dual (half-bridge) CoolSiC MOSFET module from Infineon Technologies. Typical applications: energy storage systems (ESS), EV charging, UPS systems, Solar applications.

USComponent supplies FF3MR20W3M1H_H11 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • Low switching losses
  • High current density
  • 3.2 kV AC 1 minute insulation
  • High current pin
  • PressFIT contact technology

Target Applications

Infineon FF3MR20W3M1H_H11 is used for Energy storage systems (ESS), EV charging, UPS systems, Solar applications.

Key Specifications

FF3MR20W3M1H_H11 is a 2000 V / 400 A dual (half-bridge) CoolSiC MOSFET module from Infineon Technologies (EasyPACK package). Source: Infineon datasheet and product table.

ParameterValue
ManufacturerInfineon Technologies
Product typeCoolSiC MOSFET module
ConfigurationDual (half-bridge)
Drain-source voltage (VDSS)2000 V
Nominal drain current (ID nom)400 A
PackageEasyPACK
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for FF3MR20W3M1H_H11 (reply within 24 hours)

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