F4-75R07W1H3_B11A Infineon - IGBT Module

Also written as: F4-75R07W1H3-B11A

Category: IGBT Modules

Specifications: 650V, 37.5A

F4-75R07W1H3_B11A Infineon IGBT Module

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F4-75R07W1H3_B11A Description

F4-75R07W1H3_B11A is a 650 V / 375 A four-pack (H-bridge) IGBT module from Infineon Technologies. Typical applications: automotive Applications, High Frequency Switching Application, DC/DC converter, Auxiliary Inverters, Hybrid Electrical Vehicles (H)EV, Inductive Heating and Welding.

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Summary of Features

  • Increased blocking voltage capability to 650V
  • High Speed IGBT H3
  • Low inductive design
  • Low Switching Losses
  • 2.5 kV AC 1min Insulation
  • High Creepage and Clearance Distances
  • Integrated NTC temperature sensor
  • PressFIT Contact Technology

Target Applications

Infineon F4-75R07W1H3_B11A is used for Automotive Applications, High Frequency Switching Application, DC/DC converter, Auxiliary Inverters, Hybrid Electrical Vehicles (H)EV, Inductive Heating and Welding.

Key Specifications

F4-75R07W1H3_B11A is a 650 V / 37.5 A four-pack (H-bridge) IGBT module from Infineon Technologies (EasyPACK package). Source: Infineon datasheet and product table.

ParameterValue
ManufacturerInfineon Technologies
Product typeIGBT module
ConfigurationFour-pack (H-bridge)
Collector-emitter voltage (VCES)650 V
Nominal collector current (IC nom)37.5 A
PackageEasyPACK
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for F4-75R07W1H3_B11A (reply within 24 hours)

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