MBN1200F33F Hitachi - IGBT Module

Category: IGBT Modules

Specifications: 3300V, 1200A

MBN1200F33F Hitachi IGBT Module

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MBN1200F33F Description

MBN1200F33F is a 3,300 V / 1,200 A single igbt module in the MBN / MBM / MBL family from Hitachi Power Semiconductor Device / MinebeaMitsumi. Manufacturer catalog lists this model in mass production. Verify electrical ratings, package, terminals, isolation and exact ordering suffix against the manufacturer datasheet before ordering.

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Summary of Features

MBN1200F33F: 3,300 V / 1,200 A single igbt module from Hitachi Power Semiconductor Device / MinebeaMitsumi, MBN / MBM / MBL.

  • VCES: 3,300 V
  • Catalog current: 1,200 A
  • Manufacturer status: Mass production
  • Verify exact suffix and datasheet before purchase

Target Applications

Hitachi MBN1200F33F finds applications in various industries and systems where high power switching is required.

Key Specifications

MBN1200F33F is listed in the official Hitachi Power Semiconductor Device / MinebeaMitsumi power module catalog.

ParameterValue
ManufacturerHitachi Power Semiconductor Device / MinebeaMitsumi
Part numberMBN1200F33F
SeriesMBN / MBM / MBL
Device typeSingle IGBT module
Rated VCES3,300 V
Catalog current rating1,200 A
Manufacturer catalog statusMass production
Official sourceManufacturer product lineup

Specifications are from the manufacturer lineup, not a verified complete product-specific datasheet. Confirm pinout, mechanical fit, gate-drive requirements and current ordering status.

Technical document (PDF)  |  Request a quote for MBN1200F33F (reply within 24 hours)

Related Part Numbers

MBN1800F33F
3300V, 1800A		MBN300F12
1200V, 300A		MBN200F12MBN1200D33A
3300(V) / 1200(A)
MBN1200E33D
3300(V) / 1200(A)		MBN1200D33AW
3300V, 1200A		MBN1200GR12MBN1200E33E
3300V, 1200A
MBN1200GR12EWMBN1200GR17
1700V, 1200A		MBN1200E25C
2500V, 1200A		MBN1200GS12AW
1200V, 1200A
MBN1200E17D
1700V, 1200A		MBN1200H45E2
4500V, 1200A		MBN1200H45E2-H
4500V, 1200A		MBN1200NS12AW
1200V, 1200A
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