MBN1200E33DHitachi - Power Transistor Module

Specifications: 3300(V) / 1200(A)

MBN1200E33D HITACHI IGBT from HITACHI

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MBN1200E33D Description

The Hitachi MBN1200E33D is a power semiconductor module rated at 3300 V and 1200 A, available from USComponent. This type of component is widely used in motor drives, power conversion and industrial control equipment.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MBN1200E33D.

Summary of Features

IGBT Module

Target Applications

Hitachi MBN1200E33D is used for Power Switching, AC Motor Controls, DC Motor Controls and Uninterruptible Power Supply.

Key Specifications

ManufacturerHitachi
CategoryPower Transistor Modules
Rated voltage3300 V
Rated current1200 A

Download MBN1200E33D Datasheet

MBN1200E33D PDF Datasheet