MBN1800F33F Hitachi - IGBT Module

Category: IGBT Modules

Specifications: 3300V, 1800A

MBN1800F33F Hitachi IGBT Module

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MBN1800F33F Description

MBN1800F33F is a 3,300 V / 1,800 A single igbt module in the MBN / MBM / MBL family from Hitachi Power Semiconductor Device / MinebeaMitsumi. Manufacturer catalog lists this model in mass production. Verify electrical ratings, package, terminals, isolation and exact ordering suffix against the manufacturer datasheet before ordering.

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Summary of Features

MBN1800F33F: 3,300 V / 1,800 A single igbt module from Hitachi Power Semiconductor Device / MinebeaMitsumi, MBN / MBM / MBL.

  • VCES: 3,300 V
  • Catalog current: 1,800 A
  • Manufacturer status: Mass production
  • Verify exact suffix and datasheet before purchase

Target Applications

Hitachi MBN1800F33F finds applications in various industries and systems where high power switching is required.

Key Specifications

MBN1800F33F is listed in the official Hitachi Power Semiconductor Device / MinebeaMitsumi power module catalog.

ParameterValue
ManufacturerHitachi Power Semiconductor Device / MinebeaMitsumi
Part numberMBN1800F33F
SeriesMBN / MBM / MBL
Device typeSingle IGBT module
Rated VCES3,300 V
Catalog current rating1,800 A
Manufacturer catalog statusMass production
Official sourceManufacturer product lineup

Specifications are from the manufacturer lineup, not a verified complete product-specific datasheet. Confirm pinout, mechanical fit, gate-drive requirements and current ordering status.

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