MBN1200D33AHitachi - Power Transistor Module

Specifications: 1200(V) / 30(A)

MBN1200D33A HITACHI IGBT from HITACHI

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MBN1200D33A Description

The Hitachi MBN1200D33A is a power semiconductor module rated at 1200 V and 30 A, available from USComponent. Typical applications for this type of component include motor drives, power conversion and industrial control equipment.

USComponent, a BBB A+ accredited business, helps engineers and maintenance teams source power semiconductors and industrial components, including older and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MBN1200D33A.

Summary of Features

IGBT Module

Target Applications

Hitachi MBN1200D33A is used for Inverters, Battery Chargers, DC Motors and General Purpose DC Power Supplies.

Key Specifications

ManufacturerHitachi
CategoryPower Transistor Modules
Rated voltage1200 V
Rated current30 A

Download MBN1200D33A Datasheet

MBN1200D33A PDF Datasheet