2MBI150U4A-120-M

2MBI150U4A-120-M Description

is a product code for a high power insulated gate bipolar transistor (IGBT) module manufactured by Fuji Electric. The IGBT is an electronic switch used in power electronics and is capable of handling high voltage and current levels. The 2MBI150U4A-120-M module contains two IGBTs and a diode mounted on a single substrate, and is designed for use in high-power applications such as motor drives, power supplies, and inverters. The module operates on a voltage range of 1200 volts DC and can handle a continuous current of up to 150 amps. The IGBTs in the module feature a low on-state voltage drop, which reduces power losses and increases efficiency. The 2MBI150U4A-120-M module is designed to be easy to use and integrate into existing systems. It features a compact and rugged design, with a high-temperature performance of up to 150°C, making it suitable for use in harsh industrial environments. The module also features built-in protections such as over-current and over-temperature protection, which help to ensure safe and reliable operation. Overall, the 2MBI150U4A-120-M module is a high-performance and reliable solution for high-power applications that require efficient and compact power switching.

Summary of Features

2MBI150U4A-120-M is a(n) . 1200V, 150A.

Target Applications

Fuji 2MBI150U4A-120-M finds applications in various industries and systems where high power switching is required.

Download 2MBI150U4A-120-M Datasheet

Datasheet not available