2MBI75U4A-120Fuji Electric - IGBT power module

2MBI75U4A-120 Description

2MBI75U4A-120 is an Insulated Gate Bipolar Transistor (IGBT), which is a type of power semiconductor device used in high-power switching applications. The device is designed to handle high voltage and current levels with low conduction losses and fast switching speeds. The 2MBI75U4A-120 IGBT has a blocking voltage of 1200 volts and a maximum collector current of 75 amperes. It is constructed using a combination of N-channel and P-channel MOSFETs, which are connected in a parallel configuration to form the IGBT structure. The device also includes a gate driver circuit, which provides a voltage signal to the gate electrode to control the switching behavior of the IGBT. The IGBT operates by using a positive voltage signal on the gate electrode to allow current flow between the collector and emitter terminals. When the voltage signal is removed, the IGBT turns off and prevents current flow, similar to a transistor. The IGBT offers lower conduction losses and faster switching speeds compared to traditional bipolar junction transistors (BJTs) and can handle higher voltage levels than MOSFETs. The 2MBI75U4A-120 IGBT is commonly used in a variety of high-power applications, including industrial motor drives, power inverters, uninterruptible power supplies (UPS), and welding equipment, among others. It offers a high level of reliability, efficiency, and performance, making it an essential component in many modern power electronics systems.

Summary of Features

Target Applications

Fuji Electric 2MBI75U4A-120 is used for Not Available.

Key Specifications

Manufacturer	Fuji Electric
Category	IGBT power module
Rated voltage	1200 V
Rated current	75 A

Download 2MBI75U4A-120 Datasheet

Datasheet not available