2MBI150PC-140 Fuji Electric - IGBT Module

Discontinued: Fuji Electric recommended replacement: 2MBI150VH-170-50. We supply both the original 2MBI150PC-140 and the replacement - check the datasheets before switching.

Category: IGBT Modules

Specifications: 1400V, 150A

2MBI150PC-140, Fuji, Fuji Power Transistor Module

Discontinued by the manufacturer - we source original new and surplus stock. Availability and lead time are confirmed in our quote.

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2MBI150PC-140 Description

The Fuji Electric 2MBI150PC-140 is an IGBT module, rated for 1400 V and 150 A. Inside, it has two switches in a half-bridge (2-in-1) arrangement. You'll typically find it in variable-frequency drives, servo amplifiers, UPS systems, welding machines and solar or wind inverters.

We help engineers and repair technicians find parts like the 2MBI150PC-140, including obsolete ones. Send a quick RFQ for current pricing and delivery. Before ordering, please confirm ratings and pin-out with the official datasheet.

Summary of Features

2MBI150PC-140 is a 1400 V, 150 A IGBT module from Fuji Electric, 2 in one package (half bridge).

  • Square SC SOA at 10 x IC
  • Simplified parallel connection
  • Narrow distribution of characteristics
  • High short circuit withstand capability

Target Applications

Fuji Electric 2MBI150PC-140 is used for High power switching, AC motor controls, DC motor controls, uninterruptible power supply.

Key Specifications

2MBI150PC-140 is a 1400 V, 150 A IGBT module from Fuji Electric, 2 in one package (half bridge). Source: Fuji Electric datasheet 2MBI 150PC-140 (2-Pack IGBT).

ParameterValue
ManufacturerFuji Electric
Product typeIGBT module
Configuration2 in one package (half bridge)
Collector-emitter voltage VCES1400 V
Gate-emitter voltage VGES±20 V
Collector current IC200 A (Tc = 25 °C); 150 A (Tc = 80 °C); -IC 150 A
Collector current ICp (1 ms)400 A (25 °C); 300 A (80 °C); -IC pulse 300 A
Collector power dissipation PC1100 W
VCE(sat)2.7 V typ, 3.0 V max (IC = 150 A, VGE = 15 V, 25 °C); 3.3 V typ at 125 °C
Gate-emitter threshold voltage VGE(th)6.0 / 8.0 / 9.0 V (IC = 150 mA)
Input capacitance Cies15000 pF typ (Coes 2000 pF, Cres 1000 pF)
Switching (typ / max)tON 1.2 µs, tr 0.6 µs, tOFF 1.0 µs, tf 0.3 µs max (VCC = 600 V, IC = 150 A, RG = 5.6 Ω)
Diode forward voltage VF2.4 V typ, 3.3 V max (IF = 150 A)
Diode reverse recovery time trr350 ns
Thermal resistance Rth(j-c) max0.11 °C/W IGBT; 0.24 °C/W diode; Rth(c-f) 0.025 °C/W
Junction / storage temperature+150 °C / -40 to +125 °C
Isolation voltage VisoAC 2500 V (1 min)
Screw torqueMounting / terminals M5: 3.5 Nm max (recommended 2.5 - 3.5)
DatasheetAvailable on this page (PDF)

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