2DI75D-050A Fuji Electric - Power Transistor Module

Also written as: 2DI75D050A

Category: Darlington / Bipolar Transistor Modules

Specifications: 600V, 75A

2DI75D-050A, FUJI, Power Transitor Module

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2DI75D-050A Description

The Fuji Electric 2DI75D-050A is a Darlington transistor module, rated for 600 V and 75 A. Inside, it has two switches in a half-bridge (2-in-1) arrangement. It was a workhorse in drives and power supplies before IGBTs took over, and it is still needed to repair that equipment.

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Summary of Features

2DI75D-050A is a 600 V, 75 A power transistor module (Darlington) from Fuji Electric: 2-pack: 2 darlington transistors with free wheeling diodes (half bridge) - see equivalent circuit.

  • Including free wheeling diode
  • High DC current gain
  • Insulated type

Target Applications

Fuji Electric 2DI75D-050A is used for High power switching, AC motor controls, DC motor controls, uninterruptible power supply.

Key Specifications

2DI75D-050A is a 600 V, 75 A power transistor module (Darlington) from Fuji Electric: 2-pack: 2 darlington transistors with free wheeling diodes (half bridge) - see equivalent circuit. Source: Fuji Electric datasheet 2DI 75D-050A (2-Pack BJT, 600 V, 75 A).

ParameterValue
ManufacturerFuji Electric
Product typePower transistor module (Darlington)
Configuration2-pack: 2 Darlington transistors with free wheeling diodes (half bridge) - see equivalent circuit
Collector-base voltage VCBO600 V
Collector-emitter voltage VCEO / VCEO(SUS) / VCEX(SUS)600 V / 450 V / 500 V min (IC = 150 A, VEB = 6 V)
Emitter-base voltage VEBO7 V
Collector current IC / ICP (1 ms) / -IC75 A / 150 A / 75 A
Base current IB / IBP (1 ms)4.5 A / 9 A
Collector power dissipation PC350 W one transistor; 700 W two transistors
Junction temperature Tj+150 °C
Storage temperature-40 to +125 °C
Isolation voltage VisoAC 2500 V (1 min)
DC current gain hFE100 min (IC = 75 A, VCE = 5 V)
VCE(sat) / VBE(sat)2.0 V / 2.5 V max (IC = 75 A, IB = 1.5 A)
Collector-emitter voltage -VCE (diode)1.5 V max (-IC = 75 A)
Switching time (max)ton 1.2 µs, tstg 8 µs, tf 1.5 µs (IC = 75 A, VCE = 300 V); trr 0.6 µs
Collector cut-off current ICBO1.0 mA max (VCBO = 600 V)
Thermal resistance Rth(j-c) max0.35 °C/W transistor; 1.85 °C/W diode; Rth(c-f) 0.05 °C/W typ
Mounting torqueMounting / terminals: 35 kg·cm (recommended M5: 25 - 30 kg·cm)
Weight175 g
ULE82988 (M)
CaseM208
DatasheetAvailable on this page (PDF)

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