MSG160Q41 Toshiba - Power Transistor Module

Category: IGBT Modules

Specifications: 1200(V) / 160(A)

MSG160Q41 Toshiba Power Transistor Module

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MSG160Q41 Description

Toshiba makes the MSG160Q41, a 1200 V, 160 A IGBT module. Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MSG160Q41, and please confirm ratings against the datasheet before ordering.

Summary of Features

Silicon Controlled Rectifier

Target Applications

Toshiba MSG160Q41 is used for Power Control Applications.

Key Specifications

ManufacturerToshiba
CategoryPower Transistor Modules
Rated voltage1200 V
Rated current160 A

Related Part Numbers

MSG60Q41
1200(V) / 47(A)		MSG160U41A
1600(V) / 160(A)		MSG160U43
1600(V) / 160(A)		MSG180J41
600(V) / 90(A)
MSG180L41
800(V) / 140(A)		MSG100L41MSG160L2G41
800(V) / 160(A)		MSG100U43
1600(V) / 79(A)
MSG100U41A
1600(V) / 79(A)		MSG100L43
800V, 79A		MSG180U43
1600(V) / 140(A)		MSG100L2G41
800(V) / 79(A)
MSG60J41
400(V) / 47(A)		MSG60L41MSG60L41A
800(V)/ 47(A)		MSG60L43
800(V) / 47(A)
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