MSG160L2G41 Toshiba - Power Transistor Module

Category: IGBT Modules

Specifications: 800(V) / 160(A)

MSG160L2G41 Toshiba Power Transistor Module

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MSG160L2G41 Description

Rated at 800 V and 160 A, the Toshiba MSG160L2G41 is an IGBT module. You'll typically find it in variable-frequency drives, servo amplifiers, UPS systems, welding machines and solar or wind inverters.

Looking for a replacement MSG160L2G41? USComponent can quote new and hard-to-find stock and ships worldwide. Request a quote for pricing and lead time, and double-check the datasheet to make sure it fits your application.

Summary of Features

Silicon Controlled Rectifier

Target Applications

Toshiba MSG160L2G41 is used for Power Control Applications.

Key Specifications

ManufacturerToshiba
CategoryPower Transistor Modules
Rated voltage800 V
Rated current160 A

Related Part Numbers

MSG100L2G41
800(V) / 79(A)		MSG180J41
600(V) / 90(A)		MSG180U43
1600(V) / 140(A)		MSG180L41
800(V) / 140(A)
MSG100L43
800V, 79A		MSG100L41MSG160Q41
1200(V) / 160(A)		MSG160U41A
1600(V) / 160(A)
MSG160U43
1600(V) / 160(A)		MSG100U43
1600(V) / 79(A)		MSG100U41A
1600(V) / 79(A)		MSG60J41
400(V) / 47(A)
MSG60L41MSG60L41A
800(V)/ 47(A)		MSG60L43
800(V) / 47(A)		MSG60Q41
1200(V) / 47(A)
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