MSG100L2G41 Toshiba - Power Transistor Module

Category: IGBT Modules

Specifications: 800(V) / 79(A)

MSG100L2G41 Toshiba Power Transistor Module

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MSG100L2G41 Description

Rated at 800 V and 79 A, the Toshiba MSG100L2G41 is an IGBT module. Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

USComponent is a BBB A+ accredited distributor that specializes in power modules and industrial components, new and legacy. Ask us for a quote on the MSG100L2G41; we ship worldwide. Please verify the ratings and package against the manufacturer's datasheet first.

Summary of Features

Silicon Controlled Rectifier

Target Applications

Toshiba MSG100L2G41 is used for Power Control Applications.

Key Specifications

ManufacturerToshiba
CategoryPower Transistor Modules
Rated voltage800 V
Rated current79 A