MG300J2YS9Toshiba - Power Transistor Module

Specifications: 600(V) / 300(A)

MG300J2YS9 IGBT Power Transistor Module from Toshiba

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MG300J2YS9 Description

The Toshiba MG300J2YS9 is a power semiconductor module rated at 600 V and 300 A, available from USComponent. This type of component is widely used in motor drives, power conversion and industrial control equipment.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG300J2YS9.

Summary of Features

IGBT Module

Target Applications

Toshiba MG300J2YS9 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

ManufacturerToshiba
CategoryPower Transistor Modules
Rated voltage600 V
Rated current300 A

Download MG300J2YS9 Datasheet

Datasheet not available