MG50G1BL3Toshiba - IGBT Power Transistor Module

Specifications: 50A/1000V

MG50G1BL3 IGBT Power Transistor Module from Toshiba

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MG50G1BL3 Description

The Toshiba MG50G1BL3 is an IGBT module rated at 1000 V and 50 A. Components of this type are commonly used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent, a BBB A+ accredited business, helps engineers and maintenance teams source power semiconductors and industrial components, including older and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG50G1BL3.

Summary of Features

Transistor Power Module

Target Applications

Toshiba MG50G1BL3 is used for High Power Switching / Motor Control Applications.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage1000 V
Rated current50 A

Download MG50G1BL3 Datasheet

MG50G1BL3 PDF Datasheet