MG30G1BL4 Toshiba - Power Bipolar Transistors

Category: Darlington / Bipolar Transistor Modules

Specifications: 450V, 30A

MG30G1BL4, TOSHIBA, Bipolar Darlington

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MG30G1BL4 Description

MG30G1BL4 is a 450 V, 30 A IGBT / power transistor module made by Toshiba. It was a workhorse in drives and power supplies before IGBTs took over, and it is still needed to repair that equipment.

USComponent has been supplying power semiconductors since 2001, including discontinued and hard-to-find part numbers. Send us an RFQ for the MG30G1BL4 and we will reply with price, condition and lead time. Please check the manufacturer's datasheet to confirm ratings, package and pin-out before you order.

Summary of Features

MG30G1BL4 is a 30 A IGBT / power transistor module.

Target Applications

Toshiba MG30G1BL4 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

MG30G1BL4 is a 30 A IGBT / power transistor module. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
Collector current (IC)30 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG30G1BL4 (reply within 24 hours)