MG50G2YL1A Toshiba - Bipolar Transistor Module

Category: Darlington / Bipolar Transistor Modules

Specifications: 600V, 50A

MG50G2YL1A, Toshiba, Power Module

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MG50G2YL1A Description

Rated at 450 V and 50 A, the Toshiba MG50G2YL1A is an IGBT module. Modules like this do the heavy switching in motor drives, UPS systems, induction heaters and renewable-energy inverters.

Need the MG50G2YL1A? USComponent stocks and sources power modules for repair shops, OEMs and maintenance teams worldwide. Request a quote and we'll confirm availability and lead time. Always compare against the datasheet before ordering.

Summary of Features

MG50G2YL1A is a 50 A IGBT / power transistor module.

Target Applications

Toshiba MG50G2YL1A is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

MG50G2YL1A is a 50 A IGBT / power transistor module. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
Collector current (IC)50 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG50G2YL1A (reply within 24 hours)

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