MG400V2YS60AToshiba - IGBT Power Transistor Module

MG400V2YS60A Description

MG400V2YS60A is a power module designed for use in high-power applications, such as motor control, power supplies, and renewable energy systems. It is manufactured by Toshiba Electronic Devices & Storage Corporation, a leading semiconductor company. The power module features a silicon carbide (SiC) MOSFET (metal-oxide-semiconductor field-effect transistor) chip with a voltage rating of 600V and a current rating of 400A. It also includes a diode with a reverse voltage rating of 600V and a current rating of 400A. The module is designed to operate at high frequencies, up to 20kHz, and is optimized for low switching losses and high efficiency.

Target Applications

Toshiba MG400V2YS60A is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Category	IGBT Power Transistor Module
Rated voltage	1700 V
Rated current	400 A

Download MG400V2YS60A Datasheet

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