MG30G6EL2Toshiba - IGBT Power Transistor Module

MG30G6EL2 Description

MG30G6EL2 is a product code for a high power insulated gate bipolar transistor (IGBT) module manufactured by Toshiba Semiconductor. The IGBT is an electronic switch used in power electronics and is capable of handling high voltage and current levels. The MG30G6EL2 module contains two IGBTs and a diode mounted on a single substrate, and is designed for use in high-power applications such as motor drives, power supplies, and inverters. The module operates on a voltage range of 600 volts DC and can handle a continuous current of up to 30 amps. The IGBTs in the module feature a low on-state voltage drop, which reduces power losses and increases efficiency. The MG30G6EL2 module is designed to be easy to use and integrate into existing systems. It features a compact and rugged design, with a high-temperature performance of up to 150°C, making it suitable for use in harsh industrial environments. The module also features built-in protections such as over-current and over-temperature protection, which help to ensure safe and reliable operation. Additionally, the module has an isolated base plate for better thermal management.

Target Applications

Toshiba MG30G6EL2 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

Manufacturer	Toshiba
Configuration	Six-pack power transistor (Darlington) module: 6 transistors + 6 free-wheeling diodes, collector isolated from case
Package	Toshiba 2-72A2A
IC rating	30 A
hFE min.	100 @ 30 A
VCE(sat) max.	2.0 V @ 30 A
Fall time tf max.	3 µs
Weight	240 g

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