MG100J6ES50 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 600V, 100A

MG100J6ES50, Toshiba, Power Module

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MG100J6ES50 Description

The MG100J6ES50 from Toshiba is an IGBT module with a 600 V / 100 A rating. It is built with six switches arranged as a three-phase bridge (6-in-1). Modules like this do the heavy switching in motor drives, UPS systems, induction heaters and renewable-energy inverters.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG100J6ES50, and please confirm ratings against the datasheet before ordering.

Summary of Features

MG100J6ES50 is a 600 V, 100 A IGBT / power transistor module, six-pack configuration.

Target Applications

Toshiba MG100J6ES50 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG100J6ES50 is a 600 V, 100 A IGBT / power transistor module, six-pack configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationSix-pack
Collector-emitter voltage (VCES)600 V
Collector current (IC)100 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG100J6ES50 (reply within 24 hours)