MG100J6ES50Toshiba - GTR module

MG100J6ES50 Description

The Toshiba MG100J6ES50 is a bipolar power transistor module rated at 600 V and 100 A, available from USComponent. GTR Module Silicon N Channel IGBT TRANS IGBT MODULE. This type of device is widely used in motor drives, switching regulators, UPS systems and power supplies, particularly in older equipment that is still in service.

USComponent, a BBB A+ accredited business, helps engineers and maintenance teams source power semiconductors and industrial components, including older and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG100J6ES50.

Target Applications

Toshiba MG100J6ES50 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Category	GTR module
Rated voltage	600 V
Rated current	100 A

Download MG100J6ES50 Datasheet

MG100J6ES50 PDF Datasheet