MEE250-12DAToshiba - Power Transistor Module

Specifications: 1200V, 260A

MEE250-12DA, Toshiba, Power Module

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MEE250-12DA Description

The Toshiba MEE250-12DA is a power semiconductor module rated at 1200 V and 260 A, available from USComponent. Typical applications for this type of component include motor drives, power conversion and industrial control equipment.

USComponent, a BBB A+ accredited business, helps engineers and maintenance teams source power semiconductors and industrial components, including older and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MEE250-12DA.

Target Applications

Toshiba MEE250-12DA is used for Antiparallel diode for high frequency switching devices, Free wheeling diode in converters and motor control circuits, Inductive heating and melting, Uninterruptible power supplies (UPS) and Ultrasonic cleaners and welders.

Key Specifications

ManufacturerToshiba
CategoryPower Transistor Modules
Rated voltage1200 V
Rated current260 A

Download MEE250-12DA Datasheet

MEE250-12DA PDF Datasheet