GT80J101 Toshiba - Power Transistor Module

Specifications: 600V, 80A

GT80J101 Toshiba Power Transistor Module

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GT80J101 Description

GT80J101 is a discrete IGBT, silicon N-channel, TO-3P type package (2-21F1C) from Toshiba, rated 600V, 80A. Typical applications: High power switching applications.

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Summary of Features

  • High input impedance
  • High speed: tf = 0.40 µs (max.)
  • Low saturation voltage: VCE(sat) = 3.5 V (max.)
  • Enhancement-mode

Target Applications

Toshiba GT80J101 is used for High power switching applications.

Key Specifications

GT80J101 is a discrete IGBT, silicon N-channel, TO-3P type package (2-21F1C) from Toshiba, rated 600V, 80A. Source: manufacturer datasheet.

ParameterValue
ManufacturerToshiba
Collector-emitter voltage VCES600 V
Collector current IC (DC)80 A
IC (1 ms)160 A
VCE(sat) typ. / max. (IC = 80 A)2.5 V / 3.5 V
Fall time tf max.0.40 µs
Collector power dissipation (Tc = 25 °C)200 W
Junction temperature150 °C
Package / weightTOSHIBA 2-21F1C, 9.75 g
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for GT80J101 (reply within 24 hours)

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B72220S0421K1012mbi300p-140-3
1400V, 300A		2SC25621MBI600U4-120-02
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