SKM400GB125DSemikron - IGBT Module

SKM400GB125D Description

SKM400GB125D is a high power insulated-gate bipolar transistor (IGBT) module, which is a type of semiconductor device used for switching and amplifying electrical power in high power applications. The module consists of two IGBTs connected in a half-bridge configuration, with each IGBT having a collector-emitter voltage rating of 1250 volts and a maximum collector current rating of 400 amps. The module also includes a gate driver circuitry for controlling the IGBTs, as well as built-in protection features such as short-circuit and over-temperature protection. The SKM400GB125D is designed for use in high power applications, such as motor drives, power supplies, and renewable energy systems. It is optimized for high efficiency, with low switching losses and a low on-state voltage drop. The module also features a high thermal conductivity and low thermal resistance, which allows for efficient heat dissipation and high power handling capabilities.

Summary of Features

Target Applications

Semikron SKM400GB125D is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

SKM400GB125D is a 1,200 V, 400 A IGBT module, dual (half bridge) configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT module
Configuration	Dual (half bridge)
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC)	400 A
Datasheet	Available on this page (PDF)

Download SKM400GB125D Datasheet

SKM400GB125D PDF Datasheet