SKM200GB125D Semikron - IGBT Module

SKM200GB125D Description

SKM200GB125D is a 1200 V / 200 A ultra fast SEMITRANS 3 IGBT half-bridge module from Semikron. Typical applications: switched mode power supplies above 20 kHz, resonant inverters up to 100 kHz, inductive heating and electronic welders above 20 kHz.

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Summary of Features

Target Applications

Semikron SKM200GB125D is used for Switched mode power supplies above 20 kHz, resonant inverters up to 100 kHz, inductive heating and electronic welders above 20 kHz.

Key Specifications

SKM200GB125D is a 1200 V / 200 A ultra fast SEMITRANS 3 IGBT half-bridge module from Semikron. Source: manufacturer datasheet.

Parameter	Value
Manufacturer	Semikron
Configuration	Half-bridge (GB), 2 IGBTs with inverse diodes
Package	SEMITRANS 3
Collector-emitter voltage (VCES)	1200 V
Gate-emitter voltage (VGES)	±20 V
Collector current (IC)	200 A at TC = 25 °C; 160 A at TC = 80 °C
Pulse collector current (ICRM)	300 A (tp = 1 ms)
VCE(sat)	3.3 V typ. / 3.85 V max. at IC = 150 A, VGE = 15 V (chip level)
Switching times (typ.)	td(on) 75 ns, tr 36 ns, td(off) 420 ns, tf 25 ns
Diode forward current (IF)	200 A at TC = 25 °C; 130 A at TC = 80 °C
Diode surge current (IFSM)	1450 A (10 ms, Tj = 150 °C)
Thermal resistance Rth(j-c)	0.09 K/W per IGBT, 0.25 K/W per diode
Isolation voltage (Visol)	4000 V AC, 1 min
Mass	325 g
Datasheet	Available on this page (PDF)

Note: The same datasheet also covers SKM 200GAL125D and SKM 200GAR125D (chopper versions).

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