SEMIX603GAL066HDS Semikron - IGBT Module

Category: IGBT Modules

Specifications: 600V, 600A

SEMIX603GAL066HDS,  SEMIKRON, IGBT Module

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SEMIX603GAL066HDS Description

SEMIX603GAL066HDS is a trench IGBT module, SEMiX 3s, IGBT + freewheeling diode (GAL configuration) from Semikron, rated 600V, 600A. Typical applications: Matrix converter, resonant inverter and current source inverter.

USComponent supplies SEMIX603GAL066HDS and other power semiconductors and power supplies, including discontinued types. Request a quote for price and lead time - we reply within 24 hours.

Also available as SEMiX603GAL066HDs-M04 / -M06 (pre-applied TIM: HALA P8 / HALA HT).

Summary of Features

  • Homogeneous Si
  • Trench = trenchgate technology
  • VCE(sat) with positive temperature coefficient
  • UL recognised file no. E63532

Target Applications

Semikron SEMIX603GAL066HDS is used for Matrix converter, resonant inverter and current source inverter.

Key Specifications

SEMIX603GAL066HDS is a trench IGBT module, SEMiX 3s, IGBT + freewheeling diode (GAL configuration) from Semikron, rated 600V, 600A. Source: manufacturer datasheet.

ParameterValue
ManufacturerSemikron
Collector-emitter voltage VCES600 V
IC (Tc = 25 °C / 80 °C)720 A / 541 A
ICnom600 A
ICRM1200 A
VCE(sat) typ. / max. (600 A, 25 °C)1.45 V / 1.85 V
Freewheeling diode IF (Tc = 80 °C)562 A
Max. junction temperature Tj175 °C
Isolation voltage Visol4000 V (1 min)
PackageSEMiX 3s
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for SEMIX603GAL066HDS (reply within 24 hours)

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