SEMIX603GAL066HDS Semikron - IGBT Module
SEMIX603GAL066HDS Description
SEMIX603GAL066HDS is a trench IGBT module, SEMiX 3s, IGBT + freewheeling diode (GAL configuration) from Semikron, rated 600V, 600A. Typical applications: Matrix converter, resonant inverter and current source inverter.
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Also available as SEMiX603GAL066HDs-M04 / -M06 (pre-applied TIM: HALA P8 / HALA HT).
Summary of Features
- Homogeneous Si
- Trench = trenchgate technology
- VCE(sat) with positive temperature coefficient
- UL recognised file no. E63532
Target Applications
Semikron SEMIX603GAL066HDS is used for Matrix converter, resonant inverter and current source inverter.
Key Specifications
SEMIX603GAL066HDS is a trench IGBT module, SEMiX 3s, IGBT + freewheeling diode (GAL configuration) from Semikron, rated 600V, 600A. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Manufacturer | Semikron |
| Collector-emitter voltage VCES | 600 V |
| IC (Tc = 25 °C / 80 °C) | 720 A / 541 A |
| ICnom | 600 A |
| ICRM | 1200 A |
| VCE(sat) typ. / max. (600 A, 25 °C) | 1.45 V / 1.85 V |
| Freewheeling diode IF (Tc = 80 °C) | 562 A |
| Max. junction temperature Tj | 175 °C |
| Isolation voltage Visol | 4000 V (1 min) |
| Package | SEMiX 3s |
| Datasheet | Available on this page (PDF) |
Technical document (PDF) | Request a quote for SEMIX603GAL066HDS (reply within 24 hours)
Related Part Numbers
| SEMIX402GAL066HDS 600V, 509A | SEMIX653GAL176HDS 1700V, 450A | SEMIX703GAL126HDS 1200V, 650A | SEMIX452GAL126HDS 1200V, 455A |
| SEMiX151GAL12Vs 1200V, 150A | SEMiX603GAL12E4p 1200V, 600A | SEMiX603GAL17E4p 1700V, 600A | SEMiX603GAL17E4pV1 1700V, 600A |
| SEMiX603GAL17E4pX 1700V, 600A | SEMIX603GAR066HDS 600V, 600A | SEMiX603GAR12E4p 1200V, 600A | SEMIX603GB066HDS 600V, 730A |
| SEMiX603GB12E4I25p 1200V, 600A | SEMiX603GB12E4Ip 1200V, 600A | SEMiX603GB12E4p 1200V, 600A | SEMiX603GB12E4pV1 1200V, 600A |

