RM1200HE-66S Mitsubishi - Power Transistor Module

Category: Diode & Rectifier Modules

Specifications: 3300V, 1200A

RM1200HE-66S, Mitsubishi, Power Transistor Module

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RM1200HE-66S Description

RM1200HE-66S is a high voltage diode module, 1 element in a pack, AlSiC baseplate from Mitsubishi Electric, rated 3300V, 1200A. Typical applications: Traction drives, high reliability converters / inverters and DC choppers.

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Summary of Features

  • IF 1200 A
  • VRRM 3300 V
  • Insulated type
  • 1 element in a pack
  • AlSiC baseplate

Target Applications

Mitsubishi RM1200HE-66S is used for Traction drives, high reliability converters / inverters and DC choppers.

Key Specifications

RM1200HE-66S is a high voltage diode module, 1 element in a pack, AlSiC baseplate from Mitsubishi Electric, rated 3300V, 1200A. Source: manufacturer datasheet.

ParameterValue
ManufacturerMitsubishi Electric
Repetitive peak reverse voltage VRRM3300 V
DC forward current IF (TC = 25 °C)1200 A
Surge forward current IFSM9600 A
Reverse recovery time trr1.4 µs max.
Isolation voltage6000 V
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for RM1200HE-66S (reply within 24 hours)