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QM100E3Y-2H Mitsubishi Power Transistor Module

Specifications:

100A/1000V
QM100E3Y-2H Power Transistor Module from Mitsubishi

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QM100E3Y-2H Description

IGBT POWER TRANSISTOR MODULE

Summary of Features

IGBT Power Transistor Module

Target Applications

Mitsubishi QM100E3Y-2H is used for Inverters, Servo drives, DC motor controllers, NC equipment, Welders.

Key Specifications

ManufacturerMitsubishi Electric
CategoryPower Transistor Module
Rated voltage1000 V
Rated current100 A

Download QM100E3Y-2H Datasheet

QM100E3Y-2H PDF Datasheet