CM50DY-12HMitsubishi - IGBT Module

CM50DY-12H Description

CM50DY-12H is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Mitsubishi Electric. The IGBT is a type of power semiconductor device that combines the high-speed switching capability of a MOSFET with the high-voltage and high-current handling capabilities of a bipolar transistor. The CM50DY-12H IGBT module has the following specifications: Collector-Emitter Voltage (Vces): 1200V Collector Current (Ic): 50A Maximum Power Dissipation (Pd): 330W Gate-Emitter Voltage (Vges): +/- 20V Operating Temperature: -40°C to +150°C This IGBT module is designed for use in high power applications, such as motor drives, power supplies, and renewable energy systems. It features low switching losses and high thermal performance, making it an efficient and reliable option for high power applications. The module also includes built-in protective features such as overcurrent and overvoltage protection, making it safer to use in high power applications.

Summary of Features

Target Applications

Mitsubishi CM50DY-12H is used for AC Motor Control, Motion/Servo Control, UPS, Welding, Power Supplies and Laser Power Supplies.

Key Specifications

CM50DY-12H is a 600 V, 50 A IGBT module, dual (2-in-1) configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT module
Configuration	Dual (2-in-1)
Collector-emitter voltage (VCES)	600 V
Collector current (IC)	50 A
Isolation voltage	2,500 V
Datasheet	Available on this page (PDF)

Download CM50DY-12H Datasheet

CM50DY-12H PDF Datasheet