CM1400DU-24NFMitsubishi - IGBT Module

Specifications: 1400A, 1200V, 30 pieces ready to ship from US

CM1400DU-24NF, MITSUBISHI, High Power Switching Use IGBT Module

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CM1400DU-24NF Description

CM1400DU-24NF is a type of Insulated Gate Bipolar Transistor (IGBT) module used in power electronics applications. It is produced by Mitsubishi Electric Corporation and designed for high-power switching applications. The IGBT module has a current rating of 1400A and a voltage rating of 1200V. It consists of two IGBTs in a half-bridge configuration, and each IGBT is equipped with a freewheeling diode. The module also includes a thermistor for temperature sensing and over-temperature protection. The CM1400DU-24NF IGBT module is designed with low-loss and high-speed switching characteristics, making it suitable for use in various power electronics applications, such as motor drives, renewable energy systems, and industrial automation. It is also designed with a compact and robust package, which enables easy installation and provides high reliability in harsh operating environments.

Summary of Features

CM1400DU-24NF is a IGBT Module.

Target Applications

Mitsubishi CM1400DU-24NF is use for UPS & General purpose inverters, etc.

Key Specifications

ManufacturerMitsubishi Electric
ConfigurationDual - two IGBTs in half-bridge configuration with free-wheel diodes
SeriesNF-Series
VCES1200 V
IC1400 A (TC = 25 °C)
ICM (peak)2800 A
VCE(sat) typ.1.8 V @ 1400 A
Isolation voltage2500 Vrms (AC, 1 min)
Terminal torqueM6: 3.5 - 4.5 N·m
Mounting torqueM6: 3.5 - 4.5 N·m
Weight1400 g
Junction temperature-40 to +150 °C

CM1400DU-24NF Video

CM1400DU-24NF video

Download CM1400DU-24NF Datasheet

CM1400DU-24NF PDF Datasheet