MWI75-12E8 IXYS - Power Transistor Module

Category: IGBT Modules

Specifications: 1200(V) / 130(A)

MWI75-12E8 IXYS Power Transistor Module

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MWI75-12E8 Description

Rated at 1200 V and 130 A, the IXYS MWI75-12E8 is a fast recovery diode. Typical uses include motor drives, servo amplifiers, induction heating, welding power sources and grid-tie inverters.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MWI75-12E8, and please confirm ratings against the datasheet before ordering.

Summary of Features

MWI75-12E8 is a 1,200 V, 130 A fast recovery diode.

Target Applications

IXYS MWI75-12E8 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MWI75-12E8 is a 1,200 V, 130 A fast recovery diode. Source: manufacturer datasheet.

ParameterValue
Product typeFast recovery diode
Repetitive peak reverse voltage (VRRM)1,200 V
Rated forward / output current130 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MWI75-12E8 (reply within 24 hours)