MWI100-12E8IXYS - Power Transistor Module

MWI100-12E8 Description

MWI100-12E8 is a power module produced by Mitsubishi Electric. It contains two IGBTs (Insulated Gate Bipolar Transistors) and two anti-parallel diodes connected in a half-bridge configuration. The module is designed for high power switching applications such as motor drives, renewable energy systems, and welding equipment. The MWI100-12E8 module has a maximum voltage rating of 1200V and a maximum current rating of 100A. It is equipped with built-in overcurrent and over-temperature protection features, which ensure safe and reliable operation under various load conditions. The module has a low thermal resistance design, which enables efficient heat dissipation and ensures long-term stability and reliability. Its compact size and lightweight make it suitable for applications where space is limited. The MWI100-12E8 module is a high-performance and reliable solution for power switching applications that require efficient and precise control. Its advanced design ensures high switching speed and low switching losses, resulting in high efficiency and reduced power consumption. The module is suitable for use in a variety of high power applications, including motor control, renewable energy systems, and power supplies.

Summary of Features

Target Applications

IXYS MWI100-12E8 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MWI100-12E8 is a 1,200 V, 165 A fast recovery diode. Source: manufacturer datasheet.

Parameter	Value
Product type	Fast recovery diode
Repetitive peak reverse voltage (VRRM)	1,200 V
Rated forward / output current	165 A
Datasheet	Available on this page (PDF)

Download MWI100-12E8 Datasheet

MWI100-12E8 PDF Datasheet