MWI35-12E7IXYS - Power Transistor Module

Specifications: 1200(V) / 52(A)

MWI35-12E7 IXYS Power Transistor Module

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MWI35-12E7 Description

IXYS MWI35-12E7 is a power semiconductor module rated at 1200 V and 52 A. Typical applications for this type of component include motor drives, power conversion and industrial control equipment.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MWI35-12E7.

Summary of Features

IGBT Module

Target Applications

IXYS MWI35-12E7 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

ManufacturerIXYS
CategoryPower Transistor Modules
Rated voltage1200 V
Rated current52 A

Download MWI35-12E7 Datasheet

Datasheet not available