IXFN34N100IXYS - MOSFET Module

Specifications: 1000V, 34A

IXFN34N100, IXYS, HiPerFET™ Power MOSFETs - Single Die MOSFET N-Channel Enhancement Mode

Price: $45.00

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IXFN34N100 Description

The IXYS IXFN34N100 is a MOSFET module rated at 1000 V and 34 A, available from USComponent. HiPerFET™ Power MOSFETs - Single Die MOSFET N-Channel Enhancement Mode. Components of this type are commonly used in high-frequency switching such as switch-mode power supplies, DC-DC converters, battery-powered drives and welding equipment.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the IXFN34N100.

Summary of Features

IXFN34N100 is a 1,000 V, 34 A power MOSFET (HiPerFET).

Target Applications

IXYS IXFN34N100 is used for high-frequency power switching in switch mode power supplies, DC-DC converters, battery-powered vehicles and equipment, welding machines and induction heating.

Key Specifications

IXFN34N100 is a 1,000 V, 34 A power MOSFET (HiPerFET). Source: manufacturer datasheet.

ParameterValue
Product typePower MOSFET (HiPerFET)
Drain-source voltage (VDSS)1,000 V
Drain current (ID)34 A
DatasheetAvailable on this page (PDF)

Download IXFN34N100 Datasheet

IXFN34N100 PDF Datasheet