FZ800R12KS4_B2 Infineon - IGBT Module

FZ800R12KS4_B2 Description

The FZ800R12KS4_B2 from Infineon Technologies is an IGBT module with a 1200 V / 800 A rating. The module contains a single switch with its freewheeling diode (1-in-1). Typical uses include motor drives, servo amplifiers, induction heating, welding power sources and grid-tie inverters.

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Summary of Features

Target Applications

Infineon FZ800R12KS4_B2 finds applications in various industries and systems where high power switching is required.

Key Specifications

FZ800R12KS4_B2 is a 1200 V, 800 A IGBT high power module from Infineon Technologies: single switch (igbt inverter with diode), alsic base plate, short tail igbt2 for high switching frequency. Source: Infineon technical information FZ800R12KS4_B2.

Parameter	Value
Manufacturer	Infineon Technologies
Product type	IGBT high power module
Configuration	Single switch (IGBT inverter with diode), AlSiC base plate, short tail IGBT2 for high switching frequency
Collector-emitter voltage VCES	1200 V
Continuous DC collector current	IC nom 800 A (Tc = 80 °C); IC 1200 A (Tc = 25 °C)
Repetitive peak collector current ICRM	1600 A (tP = 1 ms)
Total power dissipation Ptot	7.60 kW (Tc = 25 °C)
Gate-emitter peak voltage VGES	±20 V
VCE(sat)	3.20 V typ, 3.70 V max (IC = 800 A, VGE = 15 V, 25 °C); 3.85 V typ at 125 °C
Gate threshold voltage VGEth	4.5 / 5.5 / 6.5 V (IC = 32.0 mA)
Gate charge QG	8.40 µC
Capacitances	Cies 52.0 nF, Cres 3.40 nF typ
Switching	125 °C: td on 0.125 µs, tr 0.10 µs, td off 0.59 µs, tf 0.07 µs; Eon 76.0 mJ, Eoff 58.0 mJ
Short-circuit current ISC	6000 A (tP ≤ 10 µs, 125 °C)
Diode	IF 800 A; IFRM 1600 A; I²t 185 kA²s; IRM 900 A, Qr 160 µC, Erec 76.0 mJ (125 °C)
Diode forward voltage VF	2.00 V typ, 2.40 V max (IF = 800 A, 25 °C); 1.70 V at 125 °C
Thermal resistance RthJC	16.5 K/kW per IGBT; 25.0 K/kW per diode
Operating temperature Tvj op	-40 to +125 °C
Datasheet	Available on this page (PDF)

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