FF600R07ME4B11Infineon - IGBT Module

FF600R07ME4B11 Description

FF600R07ME4B11 is an IGBT (Insulated Gate Bipolar Transistor) module designed for use in high power switching applications. It is manufactured by Infineon Technologies, a leading supplier of power semiconductors. Here are some key features and specifications of the FF600R07ME4B11 IGBT: Voltage Rating: 1200V Current Rating: 600A Maximum Power Dissipation: 4200W Switching Frequency: up to 20kHz Insulation Voltage: 2500V Module Configuration: Half-bridge Thermal Resistance: 0.22°C/W Package Type: EconoPIM 4 Weight: 170g The FF600R07ME4B11 IGBT module is suitable for a wide range of applications, including industrial drives, welding equipment, UPS systems, and renewable energy systems. It offers low conduction and switching losses, high reliability, and excellent thermal performance.

Target Applications

Infineon FF600R07ME4B11 finds applications in various industries and systems where high power switching is required.

Key Specifications

Manufacturer	Infineon Technologies
Rated voltage	1200 V
Rated current	600 A

Download FF600R07ME4B11 Datasheet

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