FF600R12ME4Infineon - IGBT Module

FF600R12ME4 Description

FF600R12ME4 is a high power IGBT (Insulated Gate Bipolar Transistor) module designed for use in high power industrial and commercial applications. It is manufactured by Infineon Technologies, a leading semiconductor company that specializes in power electronics. The FF600R12ME4 module has a maximum DC voltage rating of 1200V and a maximum collector current rating of 600A. It features a half-bridge configuration, which consists of two IGBTs and two freewheeling diodes that provide high efficiency and fast switching performance.

Summary of Features

Target Applications

Infineon FF600R12ME4 is used for High Power Converters, Motor Drives, Servo Drives, UPS Systems and Wind Turbines.

Key Specifications

FF600R12ME4 is a 1,200 V, 600 A IGBT module, dual (half bridge) configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT module
Configuration	Dual (half bridge)
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC)	600 A
Datasheet	Available on this page (PDF)

Download FF600R12ME4 Datasheet

FF600R12ME4 PDF Datasheet