FF150R12KS4_B2 Infineon - IGBT Module

Also written as: FF150R12KS4-B2

Category: IGBT Modules

Specifications: 1200V, 150A

FF150R12KS4_B2 Infineon IGBT Module

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FF150R12KS4_B2 Description

FF150R12KS4_B2 is a 1200 V / 150 A dual (half-bridge) IGBT module from Infineon Technologies. Typical applications: high Frequency Switching Application, Medical Applications, Motor Drives, Resonant Inverter Applications, Servo Drives, UPS Systems.

USComponent supplies FF150R12KS4_B2 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • High Short Circuit Capability, Self Limiting Short
  • Kurzschlussstrom Circuit Current
  • Low Switching Losses
  • Unbeatable Robustness
  • Vcesat with positive Temperature Coefficient
  • High Creepage and Clearance Distances
  • Isolated Base Plate
  • Copper Base Plate

Target Applications

Infineon FF150R12KS4_B2 is used for High Frequency Switching Application, Medical Applications, Motor Drives, Resonant Inverter Applications, Servo Drives, UPS Systems.

Key Specifications

FF150R12KS4_B2 is a 1200 V / 150 A dual (half-bridge) IGBT module from Infineon Technologies (62mm package). Source: Infineon datasheet and product table.

ParameterValue
ManufacturerInfineon Technologies
Product typeIGBT module
ConfigurationDual (half-bridge)
Collector-emitter voltage (VCES)1200 V
Nominal collector current (IC nom)150 A
Package62mm
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for FF150R12KS4_B2 (reply within 24 hours)

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