FF08MR12W1MA1_B11A Infineon - SiC MOSFET Module

Category: MOSFET Modules

Specifications: 1200V, 150A

FF08MR12W1MA1_B11A Infineon SiC MOSFET Module

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FF08MR12W1MA1_B11A Description

FF08MR12W1MA1_B11A is a 1200 V, 150 A Infineon EasyPACK SiC MOSFET module (dual), used for automotive applications, auxiliary inverters, DC/DC converter, hybrid and electric vehicles.

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Summary of Features

  • New semiconductor material - silicon carbide
  • Blocking voltage 1200 V
  • Low RDS,on
  • Low switching losses
  • Low Qg and Crss
  • Low inductive design
  • 5.1 kV DC 1 second Insulation
  • Compact design
  • High power density
  • Integrated NTC temperature sensor

Target Applications

Infineon FF08MR12W1MA1_B11A is used for Automotive applications, auxiliary inverters, DC/DC converter, hybrid and electric vehicles.

Key Specifications

FF08MR12W1MA1_B11A is a 1,200 V, 150 A Infineon EasyPACK SiC MOSFET module. Source: manufacturer datasheet.

ParameterValue
Product typeSiC MOSFET module
ConfigurationDual (half-bridge)
Drain-source voltage (VDSS)1,200 V
Drain current (IDN)150 A
TechnologyCoolSiC Automotive MOSFET
PackageEasyPACK

Technical document (PDF)  |  Request a quote for FF08MR12W1MA1_B11A (reply within 24 hours)

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