F3L3MR12W3M1H_H11 Infineon - SiC MOSFET Module

Also written as: F3L3MR12W3M1H-H11

Category: MOSFET Modules

Specifications: 1200V, 200A

F3L3MR12W3M1H_H11 Infineon SiC MOSFET Module

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F3L3MR12W3M1H_H11 Description

F3L3MR12W3M1H_H11 is a 1200 V / 200 A 3-level CoolSiC MOSFET module from Infineon Technologies. Typical applications: three-level applications, High-frequency switching application, Solar applications.

USComponent supplies F3L3MR12W3M1H_H11 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • Increased DC-link voltage
  • High current density
  • Low switching losses
  • High current pin
  • Integrated NTC temperature sensor

Target Applications

Infineon F3L3MR12W3M1H_H11 is used for Three-level applications, High-frequency switching application, Solar applications.

Key Specifications

F3L3MR12W3M1H_H11 is a 1200 V / 200 A 3-level CoolSiC MOSFET module from Infineon Technologies (EasyPACK package). Source: Infineon datasheet and product table.

ParameterValue
ManufacturerInfineon Technologies
Product typeCoolSiC MOSFET module
Configuration3-level
Collector-emitter voltage (VCES)1200 V
Nominal collector current (IC nom)200 A
PackageEasyPACK
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for F3L3MR12W3M1H_H11 (reply within 24 hours)

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