BSM200GA120DN2 Infineon - IGBT Module

Category: IGBT Modules

Specifications: 1200V, 200A, 60 pieces in stock

BSM200GA120DN2, INFINEON, IGBT Power Module

Price: $145.00

Discontinued by the manufacturer - availability and lead time confirmed after you order or ask.

Or email sales@uscomponent.com or call 1-281-968-0718.

Add To Cart

We accept major credit cards and NET-TERMS.

BSM200GA120DN2 Description

The BSM200GA120DN2 from Infineon Technologies is an IGBT module with a 1200 V / 200 A rating. The module contains a single switch with its freewheeling diode (1-in-1). Typical uses include motor drives, servo amplifiers, induction heating, welding power sources and grid-tie inverters.

Looking for a replacement BSM200GA120DN2? USComponent can quote new and hard-to-find stock and ships worldwide. Request a quote for pricing and lead time, and double-check the datasheet to make sure it fits your application.

Summary of Features

BSM200GA120DN2 is a 1200 V, 200 A (300 A at 25 °C) IGBT module, single switch, from Siemens / eupec (Infineon).

  • Single switch
  • Including fast free-wheeling diodes
  • Package with insulated metal base plate

Target Applications

Infineon BSM200GA120DN2 finds applications in various industries and systems where high power switching is required.

Key Specifications

BSM200GA120DN2 is a 1200 V, 200 A (300 A at 25 °C) IGBT module, single switch, from Siemens / eupec (Infineon). Source: Siemens / eupec datasheet BSM200GA120DN2 (Oct-27-1997).

ParameterValue
ManufacturerSiemens / eupec (Infineon)
Product typeIGBT power module, SINGLE SWITCH 1
ConfigurationSingle switch with fast free-wheeling diode
Collector-emitter voltage VCE1200 V
DC collector current IC300 A (Tc = 25 °C); 200 A (Tc = 80 °C)
Pulsed collector current ICpuls (1 ms)600 A (25 °C); 400 A (80 °C)
Gate-emitter voltage VGE±20 V
Power dissipation per IGBT Ptot1550 W (Tc = 25 °C)
VCE(sat)2.5 V typ, 3 V max (IC = 200 A, VGE = 15 V, 25 °C); 3.1 / 3.7 V at 125 °C
Gate threshold voltage VGE(th)4.5 / 5.5 / 6.5 V (IC = 8 mA)
Transconductance gfs108 S min
Capacitances (VCE = 25 V)Cies 13 nF, Coes 2 nF, Cres 1 nF typ
Switching (Tj = 125 °C, VCC = 600 V, IC = 200 A)td(on) 110 ns, tr 80 ns, td(off) 550 ns, tf 80 ns typ (RG = 4.7 Ω)
Diode forward voltage VF2.3 V typ, 2.8 V max (IF = 200 A, 25 °C); 1.8 V typ at 125 °C
Thermal resistance RthJC0.08 K/W (IGBT), 0.15 K/W (diode)
Chip / storage temperature+150 °C / -40 to +125 °C
Insulation test voltage Vis2500 Vac (1 min)
Creepage / clearance20 mm / 11 mm
Ordering codeC67076-A2006-A70
DatasheetAvailable on this page (PDF)

Status: discontinued by Infineon (Product Discontinuation PD_079_23, last order date 2023-09-30). Infineon recommended replacement: FZ400R12KE4. Infineon notes that a replacement is not always a one-to-one drop-in: check the datasheet limits and gate drive conditions. USComponent can still source the original BSM200GA120DN2 as well as the replacement.

BSM200GA120DN2 Video

BSM200GA120DN2 video

Technical document (PDF)  |  Request a quote for BSM200GA120DN2 (reply within 24 hours)

Related Part Numbers

BSM200GA170DN2
1700V, 200A
BSM300GA120DN2
1200V, 300A
BSM400GA120DN2
1200V, 400A
BSM200GA120DN11
1200V, 200A
BSM200GA100DN11
1000V, 200A
bsm300ga170dn2
1700V, 440A
BSM300GA120DN11
1200V, 430A
BSM400GA170DN2
1700V, 400A
BSM200GA120DN2C
1200V, 200A
BSM200GA120DN2FS_E3256
1200V, 200A
BSM200GA120DLCS
1200V, 200A
BSM200GA120DN2S
1200V, 200A
BSM200GA120DLCFS_E3256
1200V, 200A
BSM200GA120DN2S_E3256
200A/1200V
BSM200GA120DLC
1200V, 200A
BSM200GA120DN2_S7
1200V, 200A, 60 pieces in stock