2MBI75N-120Fuji Electric - IGBT Module

2MBI75N-120 Description

2MBI75N-120 is an Insulated Gate Bipolar Transistor (IGBT) module designed for high power applications. It consists of two IGBTs in a half-bridge configuration with freewheeling diodes. The 2MBI75N-120 has a maximum voltage rating of 1200V and a maximum current rating of 75A. It is designed to operate at high switching frequencies and has low on-state and switching losses, making it suitable for high-efficiency power conversion applications. The IGBTs in the 2MBI75N-120 are insulated from the control circuitry using optocouplers, which provide high isolation voltage and improve noise immunity. The module also has built-in protection features, such as over-current protection and thermal protection, to ensure safe and reliable operation. The 2MBI75N-120 is designed for easy installation and maintenance. It has a compact and rugged package that provides high power density and excellent thermal performance. The module is mounted on a heat sink that provides efficient cooling and extends the lifespan of the IGBTs. Overall, the 2MBI75N-120 is a high-performance and reliable IGBT module that is suitable for a variety of high power applications, such as motor drives, power supplies, and inverters. Its low losses, high efficiency, and built-in protection features make it an ideal choice for demanding applications where high reliability and performance are required.

Target Applications

Fuji Electric 2MBI75N-120 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

Manufacturer	Fuji Electric
Configuration	Dual - 2-in-1 IGBT module (half-bridge)
Series	N-Series
VCES	1200 V
IC	75 A (continuous)
IC pulse	150 A (1 ms)
Isolation voltage	AC 2500 V (1 min)
Terminal torque	3.5 N·m
Mounting torque	3.5 N·m
Junction temperature	150 °C max.

2MBI75N-120 Video

Download 2MBI75N-120 Datasheet

2MBI75N-120 PDF Datasheet