2MBI100N-060Fuji Electric - IGBT Module

2MBI100N-060 Description

2MBI100N-060 is an Insulated Gate Bipolar Transistor (IGBT) module designed for high power switching applications. It is manufactured by Fuji Electric. The module has a maximum collector-emitter voltage of 600V and a maximum collector current of 100A. It has a low on-state voltage drop and high switching speed, making it suitable for high-frequency switching applications. The 2MBI100N-060 is designed with a 6th generation IGBT chip and an advanced diode for improved performance and efficiency. It also features a low-inductance module design for reduced switching losses and a longer lifespan. The module is equipped with a thermistor for temperature monitoring and protection against over-temperature conditions. It also has a built-in driver and protection features such as short-circuit protection, over-current protection, and under-voltage lockout. Overall, the 2MBI100N-060 is a reliable and high-performance IGBT module designed for a wide range of applications including motor drives, power supplies, renewable energy systems, and industrial equipment. It is also compact in size and can be easily mounted onto a heat sink for efficient cooling.

Target Applications

Fuji Electric 2MBI100N-060 is used for Inverter for Motor drive, AC and DC Servo drive amplifier, Uninterruptible power supply and Industrial machines such as Welding.

Key Specifications

Manufacturer	Fuji Electric
Configuration	Dual - 2-in-1 IGBT module (half-bridge)
VCES	600 V
IC	100 A (continuous)
IC pulse	200 A (1 ms)
VCE(sat) max.	2.8 V @ 100 A
Isolation voltage	AC 2500 V (1 min)
Terminal torque	3.5 N·m
Mounting torque	3.5 N·m
Weight	180 g
Junction temperature	150 °C max.

2MBI100N-060 Video

Download 2MBI100N-060 Datasheet

2MBI100N-060 PDF Datasheet