1MBI600U4-120Fuji Electric - IGBT Module

Specifications: 1200V, 600A

1MBI600U4-120, FUJI, IGBT Module

Price: $145.00

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1MBI600U4-120 Description

1MBI600U4-120 is an insulated gate bipolar transistor (IGBT) designed for use in high power switching applications. It is manufactured by Fuji Electric and is designed to handle high voltage and current loads. The "1MBI" in the part number indicates that it is a single IGBT module with a built-in free-wheeling diode. The "600" indicates the maximum voltage rating of the device, which is 600 volts. The "U4" indicates the current rating of the device, which is 120 amps. The "120" indicates the maximum switching frequency of the device, which is 120 kHz. IGBTs are semiconductor devices that are used for switching high power loads. They combine the features of bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) to provide high voltage and current capabilities with fast switching times. The 1MBI600U4-120 IGBT is designed to handle high power applications such as motor drives, power supplies, and welding equipment. The 1MBI600U4-120 IGBT has a low on-state voltage drop, allowing for efficient operation with low power dissipation. It also has a built-in free-wheeling diode, which provides protection against reverse current flow. The device is designed with a compact and robust package, making it suitable for use in harsh environments.

Summary of Features

1MBI600U4-120 is a 1200V 600A IGBT Module.

Target Applications

Fuji Electric 1MBI600U4-120 is used for Inverter for Motor drive AC and DC Servo drive amplifier and Uninterruptible power supply.

Key Specifications

ManufacturerFuji Electric
ConfigurationSingle IGBT module (1-in-1), U4-Series
VCES1200 V
IC800 A (TC = 25 °C) / 600 A (TC = 80 °C)
IC pulse1600 A / 1200 A (1 ms)
VCE(sat) typ. (terminal)2.15 V @ 600 A
Collector power dissipation2905 W
Isolation voltageAC 2500 V (1 min)
Mounting torqueM5 or M6: 2.5 - 3.5 N·m recommended
Terminal torqueM6: 3.5 - 4.5 N·m; M4: 1.3 - 1.7 N·m recommended
Junction temperature150 °C max.

1MBI600U4-120 Video

1MBI600U4-120 video

Download 1MBI600U4-120 Datasheet

1MBI600U4-120 PDF Datasheet